The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces

T. M. Parrill*, Y. W. Chung, K. A. Stair

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Clean InP(111) surfaces were prepared in an ultra-high vacuum chamber via sputtering and annealing in a phosphorous ambient. Exposing these surfaces to excited oxygen in the 105 L range resulted in a mixed In and P oxide approximately 2.8 Å thick. Oxygen exposure did not alter the position of the Fermi level, measured using ultraviolet photoemission, on sputtered/annealed surfaces. The Fermi level typically remained pinned at 1.1 eV above the valence band maximum throughout the oxygen exposures, but decreased to approximately 0.8 eV after deposition of one monolayer of gold. Similar band bending behavior had previously been observed for gold deposited on sputtered/annealed InP(111) not subjected to the intervening oxygen exposure. In addition, Auger measurements indicated possible increased phosphorus oxidation as gold was deposited on the oxygen-exposed InP.

Original languageEnglish (US)
Pages (from-to)443-454
Number of pages12
JournalSurface Science
Volume195
Issue number3
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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