The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces

T. M. Parrill; Y. W. Chung; K. A. Stair

doi:10.1016/0039-6028(88)90352-4

The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces

T. M. Parrill^*, Y. W. Chung, K. A. Stair

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Clean InP(111) surfaces were prepared in an ultra-high vacuum chamber via sputtering and annealing in a phosphorous ambient. Exposing these surfaces to excited oxygen in the 10⁵ L range resulted in a mixed In and P oxide approximately 2.8 Å thick. Oxygen exposure did not alter the position of the Fermi level, measured using ultraviolet photoemission, on sputtered/annealed surfaces. The Fermi level typically remained pinned at 1.1 eV above the valence band maximum throughout the oxygen exposures, but decreased to approximately 0.8 eV after deposition of one monolayer of gold. Similar band bending behavior had previously been observed for gold deposited on sputtered/annealed InP(111) not subjected to the intervening oxygen exposure. In addition, Auger measurements indicated possible increased phosphorus oxidation as gold was deposited on the oxygen-exposed InP.

Original language	English (US)
Pages (from-to)	443-454
Number of pages	12
Journal	Surface Science
Volume	195
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(88)90352-4
State	Published - 1988

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(88)90352-4

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@article{8a2ad14a8286429db7a251be3245ed4f,

title = "The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces",

abstract = "Clean InP(111) surfaces were prepared in an ultra-high vacuum chamber via sputtering and annealing in a phosphorous ambient. Exposing these surfaces to excited oxygen in the 105 L range resulted in a mixed In and P oxide approximately 2.8 {\AA} thick. Oxygen exposure did not alter the position of the Fermi level, measured using ultraviolet photoemission, on sputtered/annealed surfaces. The Fermi level typically remained pinned at 1.1 eV above the valence band maximum throughout the oxygen exposures, but decreased to approximately 0.8 eV after deposition of one monolayer of gold. Similar band bending behavior had previously been observed for gold deposited on sputtered/annealed InP(111) not subjected to the intervening oxygen exposure. In addition, Auger measurements indicated possible increased phosphorus oxidation as gold was deposited on the oxygen-exposed InP.",

author = "Parrill, {T. M.} and Chung, {Y. W.} and Stair, {K. A.}",

note = "Funding Information: Helpful discussions with V.M. Bermudez in the course of preparing this article are gratefully acknowledged. Thanks also to D. Burgess and V.M. Bermudez for supplying curve fitting programs. Partial support provided by the Office of Naval Research is deeply appreciated. This work is partially supported by the Northwestern University Materials Research Center through NSF MRL Grant No. DMR-8520280.",

year = "1988",

doi = "10.1016/0039-6028(88)90352-4",

language = "English (US)",

volume = "195",

pages = "443--454",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces

AU - Parrill, T. M.

AU - Chung, Y. W.

AU - Stair, K. A.

N1 - Funding Information: Helpful discussions with V.M. Bermudez in the course of preparing this article are gratefully acknowledged. Thanks also to D. Burgess and V.M. Bermudez for supplying curve fitting programs. Partial support provided by the Office of Naval Research is deeply appreciated. This work is partially supported by the Northwestern University Materials Research Center through NSF MRL Grant No. DMR-8520280.

PY - 1988

Y1 - 1988

N2 - Clean InP(111) surfaces were prepared in an ultra-high vacuum chamber via sputtering and annealing in a phosphorous ambient. Exposing these surfaces to excited oxygen in the 105 L range resulted in a mixed In and P oxide approximately 2.8 Å thick. Oxygen exposure did not alter the position of the Fermi level, measured using ultraviolet photoemission, on sputtered/annealed surfaces. The Fermi level typically remained pinned at 1.1 eV above the valence band maximum throughout the oxygen exposures, but decreased to approximately 0.8 eV after deposition of one monolayer of gold. Similar band bending behavior had previously been observed for gold deposited on sputtered/annealed InP(111) not subjected to the intervening oxygen exposure. In addition, Auger measurements indicated possible increased phosphorus oxidation as gold was deposited on the oxygen-exposed InP.

AB - Clean InP(111) surfaces were prepared in an ultra-high vacuum chamber via sputtering and annealing in a phosphorous ambient. Exposing these surfaces to excited oxygen in the 105 L range resulted in a mixed In and P oxide approximately 2.8 Å thick. Oxygen exposure did not alter the position of the Fermi level, measured using ultraviolet photoemission, on sputtered/annealed surfaces. The Fermi level typically remained pinned at 1.1 eV above the valence band maximum throughout the oxygen exposures, but decreased to approximately 0.8 eV after deposition of one monolayer of gold. Similar band bending behavior had previously been observed for gold deposited on sputtered/annealed InP(111) not subjected to the intervening oxygen exposure. In addition, Auger measurements indicated possible increased phosphorus oxidation as gold was deposited on the oxygen-exposed InP.

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UR - http://www.scopus.com/inward/citedby.url?scp=45549117188&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(88)90352-4

DO - 10.1016/0039-6028(88)90352-4

M3 - Article

AN - SCOPUS:45549117188

SN - 0039-6028

VL - 195

SP - 443

EP - 454

JO - Surface Science

JF - Surface Science

IS - 3

ER -

The effect of oxygen exposure on subsequent deposition of thin gold films on clean InP(111) surfaces

Abstract

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