The electronic structure and properties of titanium disulfide

H. W. Myron; Arthur J Freeman

doi:10.1016/0375-9601(73)90867-0

The electronic structure and properties of titanium disulfide

H. W. Myron^*, Arthur J Freeman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article

14 Scopus citations

Abstract

Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS₂ show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.

Original language	English (US)
Pages (from-to)	167-168
Number of pages	2
Journal	Physics Letters A
Volume	44
Issue number	3
DOIs	https://doi.org/10.1016/0375-9601(73)90867-0
Publication status	Published - Jun 4 1973

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Myron, H. W., & Freeman, A. J. (1973). The electronic structure and properties of titanium disulfide. Physics Letters A, 44(3), 167-168. https://doi.org/10.1016/0375-9601(73)90867-0

@article{1187789094984c9985d75a1cd35a02fb,

title = "The electronic structure and properties of titanium disulfide",

abstract = "Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS2 show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.",

author = "Myron, {H. W.} and Freeman, {Arthur J}",

year = "1973",

month = "6",

day = "4",

doi = "10.1016/0375-9601(73)90867-0",

language = "English (US)",

volume = "44",

pages = "167--168",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - The electronic structure and properties of titanium disulfide

AU - Myron, H. W.

AU - Freeman, Arthur J

PY - 1973/6/4

Y1 - 1973/6/4

N2 - Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS2 show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.

AB - Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS2 show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.

UR - http://www.scopus.com/inward/record.url?scp=26644437236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26644437236&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(73)90867-0

DO - 10.1016/0375-9601(73)90867-0

M3 - Article

AN - SCOPUS:26644437236

VL - 44

SP - 167

EP - 168

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

SN - 0375-9601

IS - 3

ER -

Access to Document

10.1016/0375-9601(73)90867-0