TY - JOUR
T1 - The electronic structure and properties of titanium disulfide
AU - Myron, H. W.
AU - Freeman, A. J.
N1 - Funding Information:
* Supported by the National Science Foundation (through the N.U. Materials Research Center and Grant No. GH-34422), the AF Office of Scientific Research and the U.S. Atomic Energy Commission.
PY - 1973/6/4
Y1 - 1973/6/4
N2 - Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS2 show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.
AB - Detailed ab initio KKR energy band calculations on the layered dichalcogenide TiS2 show it to be a semiconductor, in agreement with the traditional view of Wilson and Yoffe and optical experiments and in disagreement with recent X-ray and transport observations.
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U2 - 10.1016/0375-9601(73)90867-0
DO - 10.1016/0375-9601(73)90867-0
M3 - Article
AN - SCOPUS:26644437236
VL - 44
SP - 167
EP - 168
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 3
ER -