The authors report the first fabrication of Ga0.49In 0.51P/GaxIn1-xAs n- and p-type lattice matched (x=1) and strained (x-0.85) heterostructure insulated gate field effect transistor (HIGFET) grown by low-pressure metal-organic chemical vapour deposition (LP MOCVD). The growth conditions of Ga0.49In 0.51P have been optimised to produce a high-purity insulator material. The n-type devices show good pinch-off characteristics, with a small variation of threshold voltage with temperature consecutive to the low trap density in that system. High transconductance values have been obtained on p-type devices, due to the large valence band discontinuity between GaAs and Ga0.49In0.51P.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry