The first fabrication of n- and p-type Ga0.49In 0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD

M. Razeghi*, F. Omnes, M. Defour, P. Maurel, P. Bove, Y. J. Chan, D. Pavlidis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The authors report the first fabrication of Ga0.49In 0.51P/GaxIn1-xAs n- and p-type lattice matched (x=1) and strained (x-0.85) heterostructure insulated gate field effect transistor (HIGFET) grown by low-pressure metal-organic chemical vapour deposition (LP MOCVD). The growth conditions of Ga0.49In 0.51P have been optimised to produce a high-purity insulator material. The n-type devices show good pinch-off characteristics, with a small variation of threshold voltage with temperature consecutive to the low trap density in that system. High transconductance values have been obtained on p-type devices, due to the large valence band discontinuity between GaAs and Ga0.49In0.51P.

Original languageEnglish (US)
Article number016
Pages (from-to)274-277
Number of pages4
JournalSemiconductor Science and Technology
Volume5
Issue number3
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'The first fabrication of n- and p-type Ga<sub>0.49</sub>In <sub>0.51</sub>P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD'. Together they form a unique fingerprint.

Cite this