The first fabrication of n- and p-type Ga0.49In 0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD

M. Razeghi*, F. Omnes, M. Defour, P. Maurel, P. Bove, Y. J. Chan, D. Pavlidis

*Corresponding author for this work

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