The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa2Cu3O7-x thin films

B. V. Vuchic; K. L. Merkle; P. M. Baldo; K. A. Dean; D. B. Buchholz; R. P.H. Chang; H. Zhang; L. D. Marks

doi:10.1016/0921-4534(96)00481-9

The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa₂Cu₃O_7-x thin films

B. V. Vuchic, K. L. Merkle^*, P. M. Baldo, K. A. Dean, D. B. Buchholz, R. P.H. Chang, H. Zhang, L. D. Marks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Tilt grain-boundary junctions with a 45° [001] misorientation were formed in YBa₂Cu₃O_7-x (YBCO) thin films grown by pulsed organometallic beam epitaxy on (100) MgO substrates. The junctions were introduced at predetermined locations due to a modification of the orientation relation between the thin film and substrate following a low-energy argon ion irradiation of specific areas of the substrate surface prior to film deposition. Rutherford backscatter spectrometry and certain surface features observed by atomic force microscopy indicate that implantation of ions is necessary to cause the modified epitaxy. The low-temperature transport characteristics of individual isolated grain boundaries were determined by electromagnetic characterizations of the junction behavior. The same grain boundaries were examined by transmission electron microscopy and high-resolution electron microscopy and it was found that the boundaries are for the most part free of precipitates and well structured at the atomic scale. Regardless of the average grain boundary inclination, asymmetric (110)(100) facets dominate the microstructure of the junctions. Possible mechanisms for epitaxy modification and the transport properties in relation to the observed microstructure are discussed.

Original language	English (US)
Pages (from-to)	75-90
Number of pages	16
Journal	Physica C: Superconductivity and its applications
Volume	270
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4534(96)00481-9
State	Published - Oct 10 1996

Keywords

Critical current density
Electrical resistivity
Grain boundaries
HREM
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/0921-4534(96)00481-9

Cite this

Vuchic, B. V., Merkle, K. L., Baldo, P. M., Dean, K. A., Buchholz, D. B., Chang, R. P. H., Zhang, H., & Marks, L. D. (1996). The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa₂Cu₃O_7-x thin films. Physica C: Superconductivity and its applications, 270(1-2), 75-90. https://doi.org/10.1016/0921-4534(96)00481-9

@article{76fc40757d0a449fa2904a8903bdc12e,

title = "The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa2Cu3O7-x thin films",

abstract = "Tilt grain-boundary junctions with a 45° [001] misorientation were formed in YBa2Cu3O7-x (YBCO) thin films grown by pulsed organometallic beam epitaxy on (100) MgO substrates. The junctions were introduced at predetermined locations due to a modification of the orientation relation between the thin film and substrate following a low-energy argon ion irradiation of specific areas of the substrate surface prior to film deposition. Rutherford backscatter spectrometry and certain surface features observed by atomic force microscopy indicate that implantation of ions is necessary to cause the modified epitaxy. The low-temperature transport characteristics of individual isolated grain boundaries were determined by electromagnetic characterizations of the junction behavior. The same grain boundaries were examined by transmission electron microscopy and high-resolution electron microscopy and it was found that the boundaries are for the most part free of precipitates and well structured at the atomic scale. Regardless of the average grain boundary inclination, asymmetric (110)(100) facets dominate the microstructure of the junctions. Possible mechanisms for epitaxy modification and the transport properties in relation to the observed microstructure are discussed.",

keywords = "Critical current density, Electrical resistivity, Grain boundaries, HREM, Thin films",

author = "Vuchic, {B. V.} and Merkle, {K. L.} and Baldo, {P. M.} and Dean, {K. A.} and Buchholz, {D. B.} and Chang, {R. P.H.} and H. Zhang and Marks, {L. D.}",

note = "Funding Information: The authors would like to thank Yi Huang for his assistance and a critical reading of the manuscript and L.J. Thompson for making the computer code for analyzing the RBS spectra available. This work was supported by the National Science Foundation Office of Science and Technology Centers, under contract #DMR 91-20000 (BVV, KAD, DBB, RPHC, HZ, and LDM) and the U.S. Department of Energy, Basic Energy Sciences-Materials Science, under contract #W-31-109-ENG-38 (KLM, PMB).",

year = "1996",

month = oct,

day = "10",

doi = "10.1016/0921-4534(96)00481-9",

language = "English (US)",

volume = "270",

pages = "75--90",

journal = "Physica C: Superconductivity and its applications",

issn = "0921-4534",

publisher = "Elsevier B.V.",

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Vuchic, BV, Merkle, KL, Baldo, PM, Dean, KA, Buchholz, DB , Chang, RPH, Zhang, H & Marks, LD 1996, 'The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa₂Cu₃O_7-x thin films', Physica C: Superconductivity and its applications, vol. 270, no. 1-2, pp. 75-90. https://doi.org/10.1016/0921-4534(96)00481-9

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T1 - The formation, transport properties and microstructure of 45° [001] grain boundaries induced by epitaxy modification in YBa2Cu3O7-x thin films

AU - Vuchic, B. V.

AU - Merkle, K. L.

AU - Baldo, P. M.

AU - Dean, K. A.

AU - Buchholz, D. B.

AU - Chang, R. P.H.

AU - Zhang, H.

AU - Marks, L. D.

N1 - Funding Information: The authors would like to thank Yi Huang for his assistance and a critical reading of the manuscript and L.J. Thompson for making the computer code for analyzing the RBS spectra available. This work was supported by the National Science Foundation Office of Science and Technology Centers, under contract #DMR 91-20000 (BVV, KAD, DBB, RPHC, HZ, and LDM) and the U.S. Department of Energy, Basic Energy Sciences-Materials Science, under contract #W-31-109-ENG-38 (KLM, PMB).

PY - 1996/10/10

Y1 - 1996/10/10

N2 - Tilt grain-boundary junctions with a 45° [001] misorientation were formed in YBa2Cu3O7-x (YBCO) thin films grown by pulsed organometallic beam epitaxy on (100) MgO substrates. The junctions were introduced at predetermined locations due to a modification of the orientation relation between the thin film and substrate following a low-energy argon ion irradiation of specific areas of the substrate surface prior to film deposition. Rutherford backscatter spectrometry and certain surface features observed by atomic force microscopy indicate that implantation of ions is necessary to cause the modified epitaxy. The low-temperature transport characteristics of individual isolated grain boundaries were determined by electromagnetic characterizations of the junction behavior. The same grain boundaries were examined by transmission electron microscopy and high-resolution electron microscopy and it was found that the boundaries are for the most part free of precipitates and well structured at the atomic scale. Regardless of the average grain boundary inclination, asymmetric (110)(100) facets dominate the microstructure of the junctions. Possible mechanisms for epitaxy modification and the transport properties in relation to the observed microstructure are discussed.

AB - Tilt grain-boundary junctions with a 45° [001] misorientation were formed in YBa2Cu3O7-x (YBCO) thin films grown by pulsed organometallic beam epitaxy on (100) MgO substrates. The junctions were introduced at predetermined locations due to a modification of the orientation relation between the thin film and substrate following a low-energy argon ion irradiation of specific areas of the substrate surface prior to film deposition. Rutherford backscatter spectrometry and certain surface features observed by atomic force microscopy indicate that implantation of ions is necessary to cause the modified epitaxy. The low-temperature transport characteristics of individual isolated grain boundaries were determined by electromagnetic characterizations of the junction behavior. The same grain boundaries were examined by transmission electron microscopy and high-resolution electron microscopy and it was found that the boundaries are for the most part free of precipitates and well structured at the atomic scale. Regardless of the average grain boundary inclination, asymmetric (110)(100) facets dominate the microstructure of the junctions. Possible mechanisms for epitaxy modification and the transport properties in relation to the observed microstructure are discussed.

KW - Critical current density

KW - Electrical resistivity

KW - Grain boundaries

KW - HREM

KW - Thin films

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