The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime

J. I. Lee; B. B. Goldberg; M. Heiblum; P. J. Stiles

doi:10.1016/0038-1098(87)90756-3

The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime

J. I. Lee^*, B. B. Goldberg, M. Heiblum, P. J. Stiles

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have measured directly the diagonal conductivity of a 2DEG in GaAs/ A1GaAs heterostructure via a capacitively coupled structure with d.c. bias at magnetic fields up to 6 tesla. From the ungated region of a sample of Corbino geometry, the diagonal conductivity at the Landau gap regions was measured via capacitive coupling to a non-quantized 2DEG in the source and drain capacitors. A strong frequency dependence was observed over a range of frequencies from 100 Hz to 20 kHz at the temperature of 1.3 K. The result is compared to the calculations from the percolation theory. From the measurements of two different temperatures, 1.3 and 4.2 K, the activation energy for the conductivity was estimated to be about 10% of Landau level spacing.

Original language	English (US)
Pages (from-to)	447-450
Number of pages	4
Journal	Solid State Communications
Volume	64
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(87)90756-3
State	Published - Oct 1987

Funding

Acknowlegement The technical help of T. P. Smith, and R. T. Zeller and helful discussions with R. Joynt are gratefully acknowledged. This work was supported in part by the NSF Grant No. DMR-8314397-01.

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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title = "The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime",

abstract = "We have measured directly the diagonal conductivity of a 2DEG in GaAs/ A1GaAs heterostructure via a capacitively coupled structure with d.c. bias at magnetic fields up to 6 tesla. From the ungated region of a sample of Corbino geometry, the diagonal conductivity at the Landau gap regions was measured via capacitive coupling to a non-quantized 2DEG in the source and drain capacitors. A strong frequency dependence was observed over a range of frequencies from 100 Hz to 20 kHz at the temperature of 1.3 K. The result is compared to the calculations from the percolation theory. From the measurements of two different temperatures, 1.3 and 4.2 K, the activation energy for the conductivity was estimated to be about 10% of Landau level spacing.",

author = "Lee, {J. I.} and Goldberg, {B. B.} and M. Heiblum and Stiles, {P. J.}",

note = "Funding Information: Acknowlegement The technical help of T. P. Smith, and R. T. Zeller and helful discussions with R. Joynt are gratefully acknowledged. This work was supported in part by the NSF Grant No. DMR-8314397-01.",

year = "1987",

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doi = "10.1016/0038-1098(87)90756-3",

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T1 - The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime

AU - Lee, J. I.

AU - Goldberg, B. B.

AU - Heiblum, M.

AU - Stiles, P. J.

N1 - Funding Information: Acknowlegement The technical help of T. P. Smith, and R. T. Zeller and helful discussions with R. Joynt are gratefully acknowledged. This work was supported in part by the NSF Grant No. DMR-8314397-01.

PY - 1987/10

Y1 - 1987/10

N2 - We have measured directly the diagonal conductivity of a 2DEG in GaAs/ A1GaAs heterostructure via a capacitively coupled structure with d.c. bias at magnetic fields up to 6 tesla. From the ungated region of a sample of Corbino geometry, the diagonal conductivity at the Landau gap regions was measured via capacitive coupling to a non-quantized 2DEG in the source and drain capacitors. A strong frequency dependence was observed over a range of frequencies from 100 Hz to 20 kHz at the temperature of 1.3 K. The result is compared to the calculations from the percolation theory. From the measurements of two different temperatures, 1.3 and 4.2 K, the activation energy for the conductivity was estimated to be about 10% of Landau level spacing.

AB - We have measured directly the diagonal conductivity of a 2DEG in GaAs/ A1GaAs heterostructure via a capacitively coupled structure with d.c. bias at magnetic fields up to 6 tesla. From the ungated region of a sample of Corbino geometry, the diagonal conductivity at the Landau gap regions was measured via capacitive coupling to a non-quantized 2DEG in the source and drain capacitors. A strong frequency dependence was observed over a range of frequencies from 100 Hz to 20 kHz at the temperature of 1.3 K. The result is compared to the calculations from the percolation theory. From the measurements of two different temperatures, 1.3 and 4.2 K, the activation energy for the conductivity was estimated to be about 10% of Landau level spacing.

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JO - Solid State Communications

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The frequency dependence of the diagonal conductivity of a 2DEG in GaAs heterostructure in the quantum Hall regime

Abstract

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ASJC Scopus subject areas

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