The gating efficiency of single-molecule transistors

Chao Cheng Kaun*, Tamar Seideman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Using self-consistent first principles calculations, we study the gating efficiency of fullerene-based single-molecule transistors. We find that the efficiency depends sensitively on the geometry of the gate electrode and on the contact coupling between the molecule and the source and drain electrodes. In particular, a 4-rectangles gate electrode that surrounds the junction is substantially more effective than a conventional single-rectangle gate electrode. As the coupling strength of the molecule to the source-drain electrode is reduced, the underlying molecular orbitals localize in space and are more readily shifted, giving rise to enhanced gating efficiency.

Original languageEnglish (US)
Pages (from-to)951-956
Number of pages6
JournalJournal of Computational and Theoretical Nanoscience
Volume3
Issue number6
DOIs
StatePublished - Dec 2006

Keywords

  • Fullerene junction
  • Gating efficiency
  • Molecular electronics
  • Nonequilibrium green function approach
  • Single-molecule transistor

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The gating efficiency of single-molecule transistors'. Together they form a unique fingerprint.

Cite this