The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier

Darin Hoffman; Binh Minh Nguyen; Edward Kwei Wei Huang; Pierre Yves Delaunay; Simeon Bogdanov; Paritosh Manurkar; Manijeh Razeghi; Vaidya Nathan

doi:10.1117/12.810033

The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier

Darin Hoffman, Binh Minh Nguyen, Edward Kwei Wei Huang, Pierre Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi^*, Vaidya Nathan

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p ⁺ - Π-M -N ⁺ heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M - structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M -superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo - response and reducing dark current for devices with cutoffs greater than 14.5 μm.

Original language	English (US)
Article number	722215
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7222
DOIs	https://doi.org/10.1117/12.810033
State	Published - 2009
Event	Quantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States Duration: Jan 25 2009 → Jan 28 2009

Keywords

Antimonide
Heterodiode
InAs/GaSb
Infrared
Photodetector
Superlattice
Type-II
VLWIR

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier",

abstract = "The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p + - Π-M -N + heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M - structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M -superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo - response and reducing dark current for devices with cutoffs greater than 14.5 μm.",

keywords = "Antimonide, Heterodiode, InAs/GaSb, Infrared, Photodetector, Superlattice, Type-II, VLWIR",

author = "Darin Hoffman and Nguyen, {Binh Minh} and Huang, {Edward Kwei Wei} and Delaunay, {Pierre Yves} and Simeon Bogdanov and Paritosh Manurkar and Manijeh Razeghi and Vaidya Nathan",

year = "2009",

doi = "10.1117/12.810033",

language = "English (US)",

volume = "7222",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Quantum Sensing and Nanophotonic Devices VI ; Conference date: 25-01-2009 Through 28-01-2009",

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T1 - The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier

AU - Hoffman, Darin

AU - Nguyen, Binh Minh

AU - Huang, Edward Kwei Wei

AU - Delaunay, Pierre Yves

AU - Bogdanov, Simeon

AU - Manurkar, Paritosh

AU - Razeghi, Manijeh

AU - Nathan, Vaidya

PY - 2009

Y1 - 2009

N2 - The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p + - Π-M -N + heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M - structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M -superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo - response and reducing dark current for devices with cutoffs greater than 14.5 μm.

AB - The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p + - Π-M -N + heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M - structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M -superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo - response and reducing dark current for devices with cutoffs greater than 14.5 μm.

KW - Antimonide

KW - Heterodiode

KW - InAs/GaSb

KW - Infrared

KW - Photodetector

KW - Superlattice

KW - Type-II

KW - VLWIR

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DO - 10.1117/12.810033

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AN - SCOPUS:62449204211

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VL - 7222

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 722215

T2 - Quantum Sensing and Nanophotonic Devices VI

Y2 - 25 January 2009 through 28 January 2009

ER -

The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier

Abstract

Keywords

ASJC Scopus subject areas

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