The importance of band alignment in VLWIR type - II InAs/GaSb heterodiodes containing the M - structure barrier

Darin Hoffman, Binh Minh Nguyen, Edward Kwei Wei Huang, Pierre Yves Delaunay, Simeon Bogdanov, Paritosh Manurkar, Manijeh Razeghi*, Vaidya Nathan

*Corresponding author for this work

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

The Type-II InAs/GaSb superlattice photon detector is an attractive alternative to HgCdTe photodiodes and QWIPS. The use of p + - Π-M -N + heterodiode allows for greater flexibility in enhancing the device performance. The utilization of the Empirical Tight Binding method gives the band structure of the InAs/GaSb superlattice and the new M - structure (InAs/GaSb/AlSb/GaSb) superlattice allowing for the band alignment between the binary superlattice and the M -superlattice to be determined and see how it affects the optical performance. Then by modifying the doping level of the M- superlattice an optimal level can be determined to achieve high detectivity, by simultaneously improving both photo - response and reducing dark current for devices with cutoffs greater than 14.5 μm.

Original languageEnglish (US)
Article number722215
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7222
DOIs
StatePublished - Mar 23 2009
EventQuantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Keywords

  • Antimonide
  • Heterodiode
  • InAs/GaSb
  • Infrared
  • Photodetector
  • Superlattice
  • Type-II
  • VLWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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