The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3

N. D. Browning; J. P. Buban; H. O. Moltaji; S. J. Pennycook; G. Duscher; K. D. Johnson; R. P. Rodrigues; Vinayak P Dravid

doi:10.1063/1.123922

The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO₃

N. D. Browning^*, J. P. Buban, H. O. Moltaji, S. J. Pennycook, G. Duscher, K. D. Johnson, R. P. Rodrigues, Vinayak P Dravid

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO₃ shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO₂ does not change the atomic structure of the boundary plane, and results in a high concentration of Mn³⁺ (acceptor) enrichment at the specific Ti⁴⁺ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.

Original language	English (US)
Pages (from-to)	2638-2640
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	18
DOIs	https://doi.org/10.1063/1.123922
State	Published - May 3 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.123922

Cite this

@article{0e44461f967f4096ad359cea660f3aed,

title = "The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3 ",

abstract = "An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.",

author = "Browning, {N. D.} and Buban, {J. P.} and Moltaji, {H. O.} and Pennycook, {S. J.} and G. Duscher and Johnson, {K. D.} and Rodrigues, {R. P.} and Dravid, {Vinayak P}",

year = "1999",

month = may,

day = "3",

doi = "10.1063/1.123922",

language = "English (US)",

volume = "74",

pages = "2638--2640",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3

AU - Browning, N. D.

AU - Buban, J. P.

AU - Moltaji, H. O.

AU - Pennycook, S. J.

AU - Duscher, G.

AU - Johnson, K. D.

AU - Rodrigues, R. P.

AU - Dravid, Vinayak P

PY - 1999/5/3

Y1 - 1999/5/3

N2 - An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.

AB - An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.

UR - http://www.scopus.com/inward/record.url?scp=0001751404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001751404&partnerID=8YFLogxK

U2 - 10.1063/1.123922

DO - 10.1063/1.123922

M3 - Article

AN - SCOPUS:0001751404

SN - 0003-6951

VL - 74

SP - 2638

EP - 2640

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO₃

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this