The influence of atomic structure on the formation of electrical barriers at grain boundaries in SrTiO3

N. D. Browning*, J. P. Buban, H. O. Moltaji, S. J. Pennycook, G. Duscher, K. D. Johnson, R. P. Rodrigues, Vinayak P Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

An experimental atomic resolution analysis of an undoped Σ5 36° [001] tilt grain boundary in SrTiO3 shows that the structure contains incomplete oxygen octahedra. These incomplete octahedra act as effective oxygen vacancies and lead to a fixed, positive boundary charge. Annealing the boundary in the presence of MnO2 does not change the atomic structure of the boundary plane, and results in a high concentration of Mn3+ (acceptor) enrichment at the specific Ti4+ locations in closest proximity to the effective oxygen vacancies. This result can be explained in terms of standard charge compensation models and indicates that the formation of electrical barriers at oxide grain boundaries may be influenced by the atomic structure of the boundary plane.

Original languageEnglish (US)
Pages (from-to)2638-2640
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number18
DOIs
StatePublished - May 3 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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