The influence of composition on the crystallisation kinetics of relaxed SbGe films

M. C. Morilla; C. N. Afonso; A. K. Petford-Long; R. C. Doole

doi:10.1016/0040-6090(95)07024-9

The influence of composition on the crystallisation kinetics of relaxed SbGe films

M. C. Morilla, C. N. Afonso^*, A. K. Petford-Long, R. C. Doole

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Relaxed amorphous areas induced in Sb_xGe_1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.

Original language	English (US)
Pages (from-to)	78-81
Number of pages	4
Journal	Thin Solid Films
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(95)07024-9
State	Published - Apr 1 1996

Keywords

Amorphous materials
Annealing
Crystallization
Laser irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(95)07024-9

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title = "The influence of composition on the crystallisation kinetics of relaxed SbGe films",

abstract = "Relaxed amorphous areas induced in SbxGe1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.",

keywords = "Amorphous materials, Annealing, Crystallization, Laser irradiation",

author = "Morilla, {M. C.} and Afonso, {C. N.} and Petford-Long, {A. K.} and Doole, {R. C.}",

year = "1996",

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doi = "10.1016/0040-6090(95)07024-9",

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T1 - The influence of composition on the crystallisation kinetics of relaxed SbGe films

AU - Morilla, M. C.

AU - Afonso, C. N.

AU - Petford-Long, A. K.

AU - Doole, R. C.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - Relaxed amorphous areas induced in SbxGe1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.

AB - Relaxed amorphous areas induced in SbxGe1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.

KW - Amorphous materials

KW - Annealing

KW - Crystallization

KW - Laser irradiation

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DO - 10.1016/0040-6090(95)07024-9

M3 - Article

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SN - 0040-6090

VL - 275

SP - 78

EP - 81

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

The influence of composition on the crystallisation kinetics of relaxed SbGe films

Abstract

Keywords

ASJC Scopus subject areas

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