The influence of composition on the crystallisation kinetics of relaxed SbGe films

M. C. Morilla, C. N. Afonso*, A. K. Petford-Long, R. C. Doole

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Relaxed amorphous areas induced in SbxGe1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.

Original languageEnglish (US)
Pages (from-to)78-81
Number of pages4
JournalThin Solid Films
Volume275
Issue number1-2
DOIs
StatePublished - Apr 1 1996

Keywords

  • Amorphous materials
  • Annealing
  • Crystallization
  • Laser irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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