The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

M. Grayson; D. C. Tsui; L. N. Pfeiffer; K. W. West; A. M. Chang

doi:10.1016/S1386-9477(01)00247-8

The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

M. Grayson^*, D. C. Tsui, L. N. Pfeiffer, K. W. West, A. M. Chang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

Original language	English (US)
Pages (from-to)	80-83
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	12
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00247-8
State	Published - Jan 2002
Event	14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001

Keywords

Fractional quantum Hall effect
Resonant tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(01)00247-8

Cite this

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title = "The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge",

abstract = "New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.",

keywords = "Fractional quantum Hall effect, Resonant tunneling",

author = "M. Grayson and Tsui, {D. C.} and Pfeiffer, {L. N.} and West, {K. W.} and Chang, {A. M.}",

note = "Funding Information: This work was supported by the DOE and AFOSR. M.G. would like to thank the A.V. Humboldt Foundation for support during the writing of this paper.; 14th International Conference on the ; Conference date: 30-07-2001 Through 03-08-2001",

year = "2002",

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doi = "10.1016/S1386-9477(01)00247-8",

language = "English (US)",

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AU - Grayson, M.

AU - Tsui, D. C.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Chang, A. M.

N1 - Funding Information: This work was supported by the DOE and AFOSR. M.G. would like to thank the A.V. Humboldt Foundation for support during the writing of this paper.

PY - 2002/1

Y1 - 2002/1

N2 - New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

AB - New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

KW - Fractional quantum Hall effect

KW - Resonant tunneling

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VL - 12

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

Y2 - 30 July 2001 through 3 August 2001

ER -

The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

Abstract

Keywords

ASJC Scopus subject areas

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