The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

M. Grayson*, D. C. Tsui, L. N. Pfeiffer, K. W. West, A. M. Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

Original languageEnglish (US)
Pages (from-to)80-83
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 1 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: Jul 30 2001Aug 3 2001

Keywords

  • Fractional quantum Hall effect
  • Resonant tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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