The long wavelength luminescence observation from the self-organized InGaAs quantum dots grown on (100) GaAs substrate by metalorganic chemical vapor deposition

S. Kim*, M. Erdtmann, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The self-organized InGaAs quantum dots with uniform size distribution were realized on (100) GaAs by metalorganic chemical vapor deposition (MOCVD). We demonstrated double stacked InGaAs dot structure constructed on InGaP matrix for the first time. Strong luminescence of 1.37 μm peak wavelength from the dots, which is longest wavelength ever reported, was observed at room temperature. The temperature dependence of integrated luminescence intensity shows that the internal quantum efficiencies is very high.

Original languageEnglish (US)
Pages (from-to)1643-1652
Number of pages10
JournalMaterials Science Forum
Volume258-263
Issue number9993
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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