The molecular beam epitaxial growth of InSb on (111)B GaAs

E. Michel; J. D. Kim; S. Javadpour; J. Xu; I. Ferguson; M. Razeghi

doi:10.1063/1.117376

The molecular beam epitaxial growth of InSb on (111)B GaAs

E. Michel^*, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001) InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb.

Original language	English (US)
Pages (from-to)	215-217
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	2
DOIs	https://doi.org/10.1063/1.117376
State	Published - Jul 8 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The molecular beam epitaxial growth of InSb on (111)B GaAs",

abstract = "The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001) InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb.",

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T1 - The molecular beam epitaxial growth of InSb on (111)B GaAs

AU - Michel, E.

AU - Kim, J. D.

AU - Javadpour, S.

AU - Xu, J.

AU - Ferguson, I.

AU - Razeghi, M.

PY - 1996/7/8

Y1 - 1996/7/8

N2 - The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001) InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb.

AB - The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001) InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb.

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The molecular beam epitaxial growth of InSb on (111)B GaAs

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