The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang; Ratnasabapathy G. Iyer; Gangjian Tan; Damien J. West; Shengbai Zhang; Mercouri G. Kanatzidis

doi:10.1021/ja505301y

The new phase [Tl₄Sb₆Se₁₀][Sn ₅Sb₂Se₁₄]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang, Ratnasabapathy G. Iyer, Gangjian Tan, Damien J. West, Shengbai Zhang, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

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Abstract

We report on a new layered semiconductor Tl₈Sn ₁₀Sb₁₆Se₄₈ with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe₂-type [Sn₅Sb₂Se₁₄] and SnSe-type [Tl ₄Sb₆Se₁₀]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn ₅Sb₂Se₁₄] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl₄Sb ₆Se₁₀] layer that energetically impedes electron propagation.

Original language	English (US)
Pages (from-to)	11079-11084
Number of pages	6
Journal	Journal of the American Chemical Society
Volume	136
Issue number	31
DOIs	https://doi.org/10.1021/ja505301y
State	Published - Aug 6 2014

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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@article{c6e7acebfed4497186bea7bdf05f624c,

title = "The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance",

abstract = "We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.",

author = "Lei Fang and Iyer, {Ratnasabapathy G.} and Gangjian Tan and West, {Damien J.} and Shengbai Zhang and Kanatzidis, {Mercouri G.}",

year = "2014",

month = aug,

day = "6",

doi = "10.1021/ja505301y",

language = "English (US)",

volume = "136",

pages = "11079--11084",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "31",

}

TY - JOUR

T1 - The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]

T2 - A naturally formed semiconducting heterostructure with two-dimensional conductance

AU - Fang, Lei

AU - Iyer, Ratnasabapathy G.

AU - Tan, Gangjian

AU - West, Damien J.

AU - Zhang, Shengbai

AU - Kanatzidis, Mercouri G.

PY - 2014/8/6

Y1 - 2014/8/6

N2 - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

AB - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

UR - http://www.scopus.com/inward/record.url?scp=84905714893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905714893&partnerID=8YFLogxK

U2 - 10.1021/ja505301y

DO - 10.1021/ja505301y

M3 - Article

C2 - 25058471

AN - SCOPUS:84905714893

SN - 0002-7863

VL - 136

SP - 11079

EP - 11084

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 31

ER -

The new phase [Tl₄Sb₆Se₁₀][Sn ₅Sb₂Se₁₄]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Abstract

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