The new phase [Tl 4 Sb 6 Se 10 ][Sn 5 Sb 2 Se 14 ]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang, Ratnasabapathy G. Iyer, Gangjian Tan, Damien J. West, Shengbai Zhang, Mercouri Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report on a new layered semiconductor Tl 8 Sn 10 Sb 16 Se 48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe 2 -type [Sn 5 Sb 2 Se 14 ] and SnSe-type [Tl 4 Sb 6 Se 10 ]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5 Sb 2 Se 14 ] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl 4 Sb 6 Se 10 ] layer that energetically impedes electron propagation.

Original languageEnglish (US)
Pages (from-to)11079-11084
Number of pages6
JournalJournal of the American Chemical Society
Volume136
Issue number31
DOIs
StatePublished - Aug 6 2014

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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