The observation of the integral quantum Hall effect in PbTe/Pb1-xEuxTe quantum well structures

M. M. Olver*, J. Z. Pastalan, S. E. Romaine, B. B. Goldberg, G. Springholz, G. Ihninger, G. Bauer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The observation of the integral quantum Hall effect in narrow band-gap PbTe/Pb1-xEuxTe single and multi quantum well structures grown by molecular beam epitaxy on BaF2 substrates is reported. The transport data prove two-dimensional electron confinement. Measurements show the existence of a parallel 3D conduction channel, due primarily to un-depleted regions of the barrier and buffer material, Pb1-xEuxTe. Repeated thermal cycling causes an increase in carrier density and a degradation in transport due to dislocations induced by thermal expansion coefficient mismatch between the substrate and IV-VI compound layers.

Original languageEnglish (US)
Pages (from-to)693-696
Number of pages4
JournalSolid State Communications
Volume89
Issue number8
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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