The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi;

T. Missana, C. N. Afonso, A. K. Petford-Long, R. C. Doole

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The crystallization of amorphous Ge in contact with Bi has been studied using in-situ transmission electron microscopy. Since polycrystalline Bi films are composed of columnar crystals, which give rise to surface roughness with an enhanced accumulation of defects, the contact interface between the metal and the semiconductor shows different properties depending on the deposition order of the elements. Two different mechanisms of crystallization have been observed depending on the interface roughness.

Original languageEnglish (US)
Pages (from-to)769-779
Number of pages11
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume77
Issue number3
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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