The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi;

T. Missana; C. N. Afonso; A. K. Petford-Long; R. C. Doole

doi:10.1080/01418619808224083

The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi;

T. Missana, C. N. Afonso, A. K. Petford-Long, R. C. Doole

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The crystallization of amorphous Ge in contact with Bi has been studied using in-situ transmission electron microscopy. Since polycrystalline Bi films are composed of columnar crystals, which give rise to surface roughness with an enhanced accumulation of defects, the contact interface between the metal and the semiconductor shows different properties depending on the deposition order of the elements. Two different mechanisms of crystallization have been observed depending on the interface roughness.

Original language	English (US)
Pages (from-to)	769-779
Number of pages	11
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	77
Issue number	3
DOIs	https://doi.org/10.1080/01418619808224083
State	Published - Jan 1 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Materials Science
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

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10.1080/01418619808224083

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abstract = "The crystallization of amorphous Ge in contact with Bi has been studied using in-situ transmission electron microscopy. Since polycrystalline Bi films are composed of columnar crystals, which give rise to surface roughness with an enhanced accumulation of defects, the contact interface between the metal and the semiconductor shows different properties depending on the deposition order of the elements. Two different mechanisms of crystallization have been observed depending on the interface roughness.",

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The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi; / Missana, T.; Afonso, C. N.; Petford-Long, A. K. et al.
In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Vol. 77, No. 3, 01.01.1998, p. 769-779.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi;

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AU - Afonso, C. N.

AU - Petford-Long, A. K.

AU - Doole, R. C.

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N2 - The crystallization of amorphous Ge in contact with Bi has been studied using in-situ transmission electron microscopy. Since polycrystalline Bi films are composed of columnar crystals, which give rise to surface roughness with an enhanced accumulation of defects, the contact interface between the metal and the semiconductor shows different properties depending on the deposition order of the elements. Two different mechanisms of crystallization have been observed depending on the interface roughness.

AB - The crystallization of amorphous Ge in contact with Bi has been studied using in-situ transmission electron microscopy. Since polycrystalline Bi films are composed of columnar crystals, which give rise to surface roughness with an enhanced accumulation of defects, the contact interface between the metal and the semiconductor shows different properties depending on the deposition order of the elements. Two different mechanisms of crystallization have been observed depending on the interface roughness.

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The role of interface roughness in the metal-induced crystallization of amorphous Ge in contact with Bi;

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