The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phase

J. E. Greene*, T. Motooka, J. E. Sundgren, D. Lubben, S. Gorbatkin, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Recent progress in the understanding of mechanisms associated with low-energy (often < 100 eV) ion/surface interactions and photo-induced reactions during vapor-phase crystal growth are reviewed. Ion/surface interactions play an important role in a variety of deposition technologies including sputtering, plasma-assisted chemical vapor deposition, and, more recently, molecular beam epitaxy. Effects such as trapping, preferential sputtering, and collisional mixing are used to interpret and, in some cases, model experimental results concerning the effects of low-energy ion bombardment on nucleation and film growth kinetics, the evolution of film microstructure, elemental incorporation probabilities, surface segregation rates, and dopant depth distributions. The role of photo-stimulated gas-phase and surface reactions during laser-assisted chemical vapor deposition, including single, multiple, and multiphoton-initiated processes, radical production, and adlayer photochemistry, are also discussed together with newly developed laser-processing techniques during deposition. The focus of this review is on the development of an understanding of the controlling mechanisms in both ion/surface and photo-stimulated processes.

Original languageEnglish (US)
Pages (from-to)226-242
Number of pages17
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1
StatePublished - Jun 2 1987

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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