The role of oxygen content in thecrystallizationkineticsof(Sb0.90Ge0.10)Oxfilms

M. C. Morilla, C. N. Afonso, A. K. Petford-Long, R. C. Doole

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The differences between the crystallization kinetics arising from the incorporation of oxygen have been studied in a material of interest for phasechange optical storage (antimony-rich SbyGe1-yfilms). The crystallization process of(Sb0.90Ge0.10)Oxfilms, with x varying within the 0-10—0-16 range, has been observed during in situ isothermal annealing in a transmission electron microscope. The results show that the crystal growth mechanism is the same as for antimony-rich SbyGe1-y films regardless of oxygen content, but higher crystal growth velocities are observed. Some changes in the nucleation process occurring for the highest-oxygen-content films are discussed. The initial relaxation state has been found to influence the crystallization kinetics of these films, with relaxation resulting in a decrease in the minimum crystallization temperature and in the nucleation rate.

Original languageEnglish (US)
Pages (from-to)791-802
Number of pages12
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number3
StatePublished - Mar 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Materials Science
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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