The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content

Donghai Wu*, Zhichuan C. Niu, Shiyong Zhang, Haiqiao Ni, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 μm range is much more apparent than that in the 1.3 μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 μm single-QW were comparable with that of the 1.3 μm QWs.

Original languageEnglish (US)
Pages (from-to)494-497
Number of pages4
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
StatePublished - May 1 2006

Keywords

  • A1. Photoluminescence
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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