Abstract
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.
Original language | English (US) |
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Pages (from-to) | 7445-7450 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 45 |
DOIs | |
State | Published - Dec 2 2015 |
Keywords
- PbS
- colloidal quantum dots
- heterostructures
- infrared
- photodectors
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science