The strain gradient effect in microelectromechanical systems (MEMS)

Zhenyu Xue*, M. Taher A Saif, Yonggang Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Metallic materials display strong size effect when the characteristic length of deformation is on the order of microns. The theory of mechanism-based strain gradient (MSG) plasticity established from the Taylor dislocation model has captured this size dependence of material behavior at the micron scale very well. The strain gradient effect in microelectromechanical systems (MEMS) is investigated in this paper via the MSG plasticity theory since the typical size of MEMS is on the order of microns (comparable to the internal material length in MSG plasticity). Through an example of a digital micromirror device (DMD), it is shown that the strain gradient effect significantly increases the mechanical strain energy in the DMD, and reduces the rotation time of the micromirror. However, the strain gradient has no effect on the critical bias voltage governing the fast rotation of the micromirror.

Original languageEnglish (US)
Pages (from-to)27-35
Number of pages9
JournalJournal of Microelectromechanical Systems
Volume11
Issue number1
DOIs
StatePublished - Feb 2002

Funding

Manuscript received May 23, 2001; revised September 6, 2001. The work of M. T. A. Saif was supported by an NSF Career Grant ECS 97-34368. The work of Y. Huang was supported by NSF Grant CMS-0084980 and NSFC. Subject Editor R. T. Howe. The authors are with the Department of Mechanical and Industrial Engineering, University of Illinois, Urbana, IL 61801 USA (e-mail: [email protected]). Publisher Item Identifier S 1057-7157(02)00079-3.

Keywords

  • Microelectromechanical systems (MEMS)
  • Size effect
  • Strain gradient plasticity

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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