The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

Young Suk Choi; A. K. Petford-Long; R. C C Ward; M. R. Wells

doi:10.1016/S0040-6090(02)00444-3

The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

Young Suk Choi, A. K. Petford-Long, R. C C Ward, M. R. Wells

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(1 1 1) substrates and insertion of a Cu buffer layer were used. The 7 × 7 surface reconstruction of Si(1 1 1) was found out to be the crucial factor for the epitaxial growth. This surface promotes the reaction of Si with the Cu buffer layer to form epitaxial η″-Cu₃Si which then allows good epitaxy of NiFe and FeMn. In situ reflection high-energy electron diffraction and high resolution electron microscopy observation confirmed the epitaxial growth of the films to be of high quality with well defined flat interface between the layers.

Original language	English (US)
Pages (from-to)	41-45
Number of pages	5
Journal	Thin Solid Films
Volume	413
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00444-3
State	Published - Jun 24 2002

Keywords

Exchange-biased films
High resolution electron microscopy
Molecular beam epitaxy
Reflection high-energy electron diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(02)00444-3

Cite this

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title = "The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers",

abstract = "NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(1 1 1) substrates and insertion of a Cu buffer layer were used. The 7 × 7 surface reconstruction of Si(1 1 1) was found out to be the crucial factor for the epitaxial growth. This surface promotes the reaction of Si with the Cu buffer layer to form epitaxial η″-Cu3Si which then allows good epitaxy of NiFe and FeMn. In situ reflection high-energy electron diffraction and high resolution electron microscopy observation confirmed the epitaxial growth of the films to be of high quality with well defined flat interface between the layers.",

keywords = "Exchange-biased films, High resolution electron microscopy, Molecular beam epitaxy, Reflection high-energy electron diffraction",

author = "Choi, {Young Suk} and Petford-Long, {A. K.} and Ward, {R. C C} and Wells, {M. R.}",

note = "Funding Information: We are grateful to the Engineering and Physical Sciences Research Council for the financial support and to the head of the department for laboratory space.",

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T1 - The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

AU - Choi, Young Suk

AU - Petford-Long, A. K.

AU - Ward, R. C C

AU - Wells, M. R.

N1 - Funding Information: We are grateful to the Engineering and Physical Sciences Research Council for the financial support and to the head of the department for laboratory space.

PY - 2002/6/24

Y1 - 2002/6/24

N2 - NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(1 1 1) substrates and insertion of a Cu buffer layer were used. The 7 × 7 surface reconstruction of Si(1 1 1) was found out to be the crucial factor for the epitaxial growth. This surface promotes the reaction of Si with the Cu buffer layer to form epitaxial η″-Cu3Si which then allows good epitaxy of NiFe and FeMn. In situ reflection high-energy electron diffraction and high resolution electron microscopy observation confirmed the epitaxial growth of the films to be of high quality with well defined flat interface between the layers.

AB - NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(1 1 1) substrates and insertion of a Cu buffer layer were used. The 7 × 7 surface reconstruction of Si(1 1 1) was found out to be the crucial factor for the epitaxial growth. This surface promotes the reaction of Si with the Cu buffer layer to form epitaxial η″-Cu3Si which then allows good epitaxy of NiFe and FeMn. In situ reflection high-energy electron diffraction and high resolution electron microscopy observation confirmed the epitaxial growth of the films to be of high quality with well defined flat interface between the layers.

KW - Exchange-biased films

KW - High resolution electron microscopy

KW - Molecular beam epitaxy

KW - Reflection high-energy electron diffraction

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

Abstract

Keywords

ASJC Scopus subject areas

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