The synthesis, single-crystal structure, optical absorption, and resistivity of Th2GeSe5

Lukasz A. Koscielski, Christos D. Malliakas, Amy A. Sarjeant, James A. Ibers*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The compound Th2GeSe5 has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th 2GeSe5 crystallizes in the Ba5Si3 structure type with four formula units in the space group D8 4h - P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c = 13.6302(9) Å at 100 (2) K. From optical absorption measurements Th2GeSe5 is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th2GeSe5 is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2) × 10 9 Ω cm measured on a single crystal.

Original languageEnglish (US)
Pages (from-to)35-38
Number of pages4
JournalJournal of Solid State Chemistry
Volume205
DOIs
StatePublished - Jan 1 2013

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Keywords

  • Band gap
  • Germanium
  • Resistivity
  • Selenium
  • Ternary chalcogenide
  • Thorium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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