The synthesis, single-crystal structure, optical absorption, and resistivity of Th2GeSe5

Lukasz A. Koscielski; Christos D. Malliakas; Amy A. Sarjeant; James A. Ibers

doi:10.1016/j.jssc.2013.06.031

The synthesis, single-crystal structure, optical absorption, and resistivity of Th₂GeSe₅

Lukasz A. Koscielski, Christos D. Malliakas, Amy A. Sarjeant, James A. Ibers^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The compound Th₂GeSe₅ has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th ₂GeSe₅ crystallizes in the Ba₅Si₃ structure type with four formula units in the space group D⁸ _4h - P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c = 13.6302(9) Å at 100 (2) K. From optical absorption measurements Th₂GeSe₅ is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th₂GeSe₅ is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2) × 10 ⁹ Ω cm measured on a single crystal.

Original language	English (US)
Pages (from-to)	35-38
Number of pages	4
Journal	Journal of Solid State Chemistry
Volume	205
DOIs	https://doi.org/10.1016/j.jssc.2013.06.031
State	Published - 2013

Keywords

Band gap
Germanium
Resistivity
Selenium
Ternary chalcogenide
Thorium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Physical and Theoretical Chemistry
Inorganic Chemistry
Materials Chemistry

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title = "The synthesis, single-crystal structure, optical absorption, and resistivity of Th2GeSe5",

abstract = "The compound Th2GeSe5 has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th 2GeSe5 crystallizes in the Ba5Si3 structure type with four formula units in the space group D8 4h - P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) {\AA} and c = 13.6302(9) {\AA} at 100 (2) K. From optical absorption measurements Th2GeSe5 is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th2GeSe5 is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2) × 10 9 Ω cm measured on a single crystal.",

keywords = "Band gap, Germanium, Resistivity, Selenium, Ternary chalcogenide, Thorium",

author = "Koscielski, {Lukasz A.} and Malliakas, {Christos D.} and Sarjeant, {Amy A.} and Ibers, {James A.}",

note = "Funding Information: The research was supported at Northwestern University by the U.S. Department of Energy, Basic Energy Sciences, Chemical Sciences, Biosciences, and Geosciences Division and Division of Materials Sciences and Engineering Grant ER-15522 and by the Nuclear Energy University Programs of the U.S. Department of Energy Office of Nuclear Energy. ",

year = "2013",

doi = "10.1016/j.jssc.2013.06.031",

language = "English (US)",

volume = "205",

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publisher = "Academic Press Inc.",

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AU - Koscielski, Lukasz A.

AU - Malliakas, Christos D.

AU - Sarjeant, Amy A.

AU - Ibers, James A.

N1 - Funding Information: The research was supported at Northwestern University by the U.S. Department of Energy, Basic Energy Sciences, Chemical Sciences, Biosciences, and Geosciences Division and Division of Materials Sciences and Engineering Grant ER-15522 and by the Nuclear Energy University Programs of the U.S. Department of Energy Office of Nuclear Energy.

PY - 2013

Y1 - 2013

N2 - The compound Th2GeSe5 has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th 2GeSe5 crystallizes in the Ba5Si3 structure type with four formula units in the space group D8 4h - P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c = 13.6302(9) Å at 100 (2) K. From optical absorption measurements Th2GeSe5 is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th2GeSe5 is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2) × 10 9 Ω cm measured on a single crystal.

AB - The compound Th2GeSe5 has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th 2GeSe5 crystallizes in the Ba5Si3 structure type with four formula units in the space group D8 4h - P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c = 13.6302(9) Å at 100 (2) K. From optical absorption measurements Th2GeSe5 is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th2GeSe5 is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2) × 10 9 Ω cm measured on a single crystal.

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KW - Resistivity

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