The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

T. L. Lee*, Y. Qian, P. F. Lyman, J. C. Woicik, J. G. Pellegrino, M. J. Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.

Original languageEnglish (US)
Pages (from-to)437-444
Number of pages8
JournalPhysica B: Condensed Matter
Volume221
Issue number1-4
DOIs
StatePublished - Apr 2 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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