A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering