The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

T. L. Lee; Y. Qian; P. F. Lyman; J. C. Woicik; J. G. Pellegrino; M. J. Bedzyk

doi:10.1016/0921-4526(95)00964-7

The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

T. L. Lee^*, Y. Qian, P. F. Lyman, J. C. Woicik, J. G. Pellegrino, M. J. Bedzyk

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.

Original language	English (US)
Pages (from-to)	437-444
Number of pages	8
Journal	Physica B: Condensed Matter
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(95)00964-7
State	Published - Apr 2 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{0cbc0afaf03f40f9850cafceda5f006d,

title = "The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures",

abstract = "A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 {\AA} GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.",

author = "Lee, {T. L.} and Y. Qian and Lyman, {P. F.} and Woicik, {J. C.} and Pellegrino, {J. G.} and Bedzyk, {M. J.}",

note = "Funding Information: This work was supported by the US Department of Energy under contract No. W-31-109-ENG-38 to Argonne National Laboratory, contract No. DE-AC02-76CH00016 to the National Synchrotron Light Source at Brookhaven National Laboratory, and by the National Science Foundation under contract No. DMR-9120521 to the MRC at Northwestern University. PFL is partially supported by the National Institutes of Health under award No. IR01KD45295-01. Additional support was provided by the National Institute of Standards and Technology.",

year = "1996",

month = apr,

day = "2",

doi = "10.1016/0921-4526(95)00964-7",

language = "English (US)",

volume = "221",

pages = "437--444",

journal = "Physica B: Condensed Matter",

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publisher = "Elsevier",

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TY - JOUR

T1 - The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

AU - Lee, T. L.

AU - Qian, Y.

AU - Lyman, P. F.

AU - Woicik, J. C.

AU - Pellegrino, J. G.

AU - Bedzyk, M. J.

N1 - Funding Information: This work was supported by the US Department of Energy under contract No. W-31-109-ENG-38 to Argonne National Laboratory, contract No. DE-AC02-76CH00016 to the National Synchrotron Light Source at Brookhaven National Laboratory, and by the National Science Foundation under contract No. DMR-9120521 to the MRC at Northwestern University. PFL is partially supported by the National Institutes of Health under award No. IR01KD45295-01. Additional support was provided by the National Institute of Standards and Technology.

PY - 1996/4/2

Y1 - 1996/4/2

N2 - A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.

AB - A heteroepitaxial structure consisting of 1 ML InAs grown on GaAs(0 0 1) and then capped with 25 Å GaAs was examined by the X-ray standing wave (XSW) method. By monitoring the In L fluorescence while scanning through the GaAs(0 0 4) Bragg reflection, the perpendicular strain within the InAs layer was directly measured to be 7.7%, which is in good agreement with macroscopic elasticity theory (7.3%). We also demonstrate that, combined with the evanescent-wave-emission effect, the XSW method can be used to measure the strain-induced displacement of the cap layer in the growth direction.

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SP - 437

EP - 444

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -

The use of X-ray standing waves and evanescent-wave emission to study buried strained-layer heterostructures

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