Theoretical and experimental analysis of high power Al-free InGaAsP/GaAs (λ=0.808 μm) laser diodes

Hyuk Jong Yi*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Al-free InGaAsP/GaAs laser diodes with λ=0.808 μm were optimized using the laser-photon model developed within a field-theoretical frame. Comparison with experiment and classical laser and LED theories showed that the predictions of the theory were excellent over a wide range of operating conditions. The optimized laser structure yielded a high efficiency, as calculated in the theory, and a high output power of up to 6 W in CW operation with uncoated 100-μm-wide broad-area lasers. The maximum power density corresponded to over 12 MW/cm2, which was about 3 times higher than that achieved using uncoated AlGaAs/GaAs lasers of the same emission wavelength.

Original languageEnglish (US)
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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