Theoretical and experimental study of α-Sn deposited on CdTe(001)

E. Alp, J. B. Ketterson, J. A. Gómez, Diana Guenzburger, E. M. Baggio-Saitovitch, S. Cho, D. E. Ellis, M. Y. Hu, E. C. Passamani

Research output: Contribution to journalArticlepeer-review

Abstract

Gray tin films enriched by over 95% (formula presented) and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Mössbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the α-Sn phase and, after thermal treatment, the β phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for (formula presented) atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.

Original languageEnglish (US)
Pages (from-to)11
Number of pages1
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number11
DOIs
StatePublished - 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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