Thermal distribution in high power optical devices with power-law thermal conductivity

Chuanle Zhou; Matthew A Grayson

doi:10.1117/12.913568

Thermal distribution in high power optical devices with power-law thermal conductivity

Chuanle Zhou, Matthew A Grayson^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We introduce a power-law approximation to model non-linear ranges of the thermal conductivity, and under this approximation derive a simple analytical expression for calculating the temperature profile in high power quantum cascade lasers and light emitting diodes. The thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is used as an example, having negative or positive power-law exponents depending on the thermal range of interest. The result is an increase or decrease in the temperature, respectively, relative to the uniform thermal conductivity assumption.

Original language	English (US)
Title of host publication	Quantum Sensing and Nanophotonic Devices IX
Volume	8268
DOIs	https://doi.org/10.1117/12.913568
State	Published - Feb 20 2012
Event	Quantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States Duration: Jan 22 2012 → Jan 26 2012

Other

Other	Quantum Sensing and Nanophotonic Devices IX
Country/Territory	United States
City	San Francisco, CA
Period	1/22/12 → 1/26/12

Keywords

high power
T2SL
temperature profile
thermal conductivity

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1117/12.913568

Cite this

@inproceedings{23dd4e0887964815905061de362d3e67,

title = "Thermal distribution in high power optical devices with power-law thermal conductivity",

abstract = "We introduce a power-law approximation to model non-linear ranges of the thermal conductivity, and under this approximation derive a simple analytical expression for calculating the temperature profile in high power quantum cascade lasers and light emitting diodes. The thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is used as an example, having negative or positive power-law exponents depending on the thermal range of interest. The result is an increase or decrease in the temperature, respectively, relative to the uniform thermal conductivity assumption.",

keywords = "high power, T2SL, temperature profile, thermal conductivity",

author = "Chuanle Zhou and Grayson, {Matthew A}",

year = "2012",

month = feb,

day = "20",

doi = "10.1117/12.913568",

language = "English (US)",

isbn = "9780819489111",

volume = "8268",

booktitle = "Quantum Sensing and Nanophotonic Devices IX",

note = "Quantum Sensing and Nanophotonic Devices IX ; Conference date: 22-01-2012 Through 26-01-2012",

}

TY - GEN

T1 - Thermal distribution in high power optical devices with power-law thermal conductivity

AU - Zhou, Chuanle

AU - Grayson, Matthew A

PY - 2012/2/20

Y1 - 2012/2/20

N2 - We introduce a power-law approximation to model non-linear ranges of the thermal conductivity, and under this approximation derive a simple analytical expression for calculating the temperature profile in high power quantum cascade lasers and light emitting diodes. The thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is used as an example, having negative or positive power-law exponents depending on the thermal range of interest. The result is an increase or decrease in the temperature, respectively, relative to the uniform thermal conductivity assumption.

AB - We introduce a power-law approximation to model non-linear ranges of the thermal conductivity, and under this approximation derive a simple analytical expression for calculating the temperature profile in high power quantum cascade lasers and light emitting diodes. The thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is used as an example, having negative or positive power-law exponents depending on the thermal range of interest. The result is an increase or decrease in the temperature, respectively, relative to the uniform thermal conductivity assumption.

KW - high power

KW - T2SL

KW - temperature profile

KW - thermal conductivity

UR - http://www.scopus.com/inward/record.url?scp=84856927576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856927576&partnerID=8YFLogxK

U2 - 10.1117/12.913568

DO - 10.1117/12.913568

M3 - Conference contribution

AN - SCOPUS:84856927576

SN - 9780819489111

VL - 8268

BT - Quantum Sensing and Nanophotonic Devices IX

T2 - Quantum Sensing and Nanophotonic Devices IX

Y2 - 22 January 2012 through 26 January 2012

ER -

Thermal distribution in high power optical devices with power-law thermal conductivity

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this