Thermal effects in 10 keV Si PKA cascades in 3C-SiC

David E. Farrell, Noam Bernstein, Wing Kam Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We present a molecular dynamics study of the influence of temperature on defect generation and evolution in irradiated cubic silicon carbide. We simulated 10 keV displacement cascades, with an emphasis on the quantification of the spatial distribution of defects, at six different temperatures from 0 K to 2000 K under identical primary knock-on atom conditions. By post-processing the simulation results we analyzed the temporal evolution of vacancies, interstitials, and antisite defects, the spatial distribution of vacancies, and the distribution of vacancy cluster sizes. The majority of vacancies were found to be isolated at all temperatures. We found evidence of temperature dependence in C and Si replacements and CSi antisite formation, as well as reduced damage generation behavior due to enhanced defect relaxation at 2000 K.

Original languageEnglish (US)
Pages (from-to)572-581
Number of pages10
JournalJournal of Nuclear Materials
Volume385
Issue number3
DOIs
StatePublished - Apr 15 2009

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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