Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature

M. Razeghi*, H. Lim, S. Tsao, H. Seo, W. Zhang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a room temperature operating and high-performance InAs quantum-dot infrared photodetector on InP substrate and thermal imaging of 320× 256 focal plane array based on this device up to 200 K.

Original languageEnglish (US)
Title of host publicationLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
Pages15-16
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Lake Buena Vista, FL, United States
Duration: Oct 21 2007Oct 25 2007

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
CountryUnited States
CityLake Buena Vista, FL
Period10/21/0710/25/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature'. Together they form a unique fingerprint.

Cite this