Thermal quenching of Er3+-related luminescence in In 1-xGaxP

A. J. Neuhalfen; B. W. Wessels

doi:10.1063/1.106886

Thermal quenching of Er³⁺-related luminescence in In _1-xGa_xP

A. J. Neuhalfen^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Thermal quenching of the characteristic intracenter luminescence from trivalent Er ions in In_1-xGa_xP layers was investigated. The Er-doped InGaP alloys were prepared by metalorganic vapor phase epitaxy with compositions ranging from x=0 to 0.31. A thermally activated luminescence quenching was observed with an activation energy that depended on the alloy composition. From measurements of the thermal quenching of the photoluminescence, the energy level of an erbium-related trapping center in the alloys was determined. The variation of the position of the Er-related energy level as a function of alloy composition is explained in terms of a vacuum-referred binding energy model.

Original language	English (US)
Pages (from-to)	2657-2659
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	21
DOIs	https://doi.org/10.1063/1.106886
State	Published - 1992

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Physics and Astronomy (miscellaneous)

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title = "Thermal quenching of Er3+-related luminescence in In 1-xGaxP",

abstract = "Thermal quenching of the characteristic intracenter luminescence from trivalent Er ions in In1-xGaxP layers was investigated. The Er-doped InGaP alloys were prepared by metalorganic vapor phase epitaxy with compositions ranging from x=0 to 0.31. A thermally activated luminescence quenching was observed with an activation energy that depended on the alloy composition. From measurements of the thermal quenching of the photoluminescence, the energy level of an erbium-related trapping center in the alloys was determined. The variation of the position of the Er-related energy level as a function of alloy composition is explained in terms of a vacuum-referred binding energy model.",

author = "Neuhalfen, {A. J.} and Wessels, {B. W.}",

year = "1992",

doi = "10.1063/1.106886",

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T1 - Thermal quenching of Er3+-related luminescence in In 1-xGaxP

AU - Neuhalfen, A. J.

AU - Wessels, B. W.

PY - 1992

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N2 - Thermal quenching of the characteristic intracenter luminescence from trivalent Er ions in In1-xGaxP layers was investigated. The Er-doped InGaP alloys were prepared by metalorganic vapor phase epitaxy with compositions ranging from x=0 to 0.31. A thermally activated luminescence quenching was observed with an activation energy that depended on the alloy composition. From measurements of the thermal quenching of the photoluminescence, the energy level of an erbium-related trapping center in the alloys was determined. The variation of the position of the Er-related energy level as a function of alloy composition is explained in terms of a vacuum-referred binding energy model.

AB - Thermal quenching of the characteristic intracenter luminescence from trivalent Er ions in In1-xGaxP layers was investigated. The Er-doped InGaP alloys were prepared by metalorganic vapor phase epitaxy with compositions ranging from x=0 to 0.31. A thermally activated luminescence quenching was observed with an activation energy that depended on the alloy composition. From measurements of the thermal quenching of the photoluminescence, the energy level of an erbium-related trapping center in the alloys was determined. The variation of the position of the Er-related energy level as a function of alloy composition is explained in terms of a vacuum-referred binding energy model.

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JF - Applied Physics Letters

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Thermal quenching of Er³⁺-related luminescence in In _1-xGa_xP

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