The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)