Thermal quenching properties of Er-doped GaP

X. Z. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.

Original languageEnglish (US)
Pages (from-to)1537-1539
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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