Thermal quenching properties of Er-doped GaP

X. Z. Wang; B. W. Wessels

doi:10.1063/1.111884

Thermal quenching properties of Er-doped GaP

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er³⁺ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.

Original language	English (US)
Pages (from-to)	1537-1539
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	12
DOIs	https://doi.org/10.1063/1.111884
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.111884

Cite this

@article{5885933a6dbb44ad969853b9c533aeb8,

title = "Thermal quenching properties of Er-doped GaP",

abstract = "The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.",

author = "Wang, {X. Z.} and Wessels, {B. W.}",

year = "1994",

doi = "10.1063/1.111884",

language = "English (US)",

volume = "64",

pages = "1537--1539",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Thermal quenching properties of Er-doped GaP

AU - Wang, X. Z.

AU - Wessels, B. W.

PY - 1994

Y1 - 1994

N2 - The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.

AB - The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0028388579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028388579&partnerID=8YFLogxK

U2 - 10.1063/1.111884

DO - 10.1063/1.111884

M3 - Article

AN - SCOPUS:0028388579

SN - 0003-6951

VL - 64

SP - 1537

EP - 1539

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Thermal quenching properties of Er-doped GaP

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this