Thermal stability and phase purity in polycrystalline Ba 8Ga x Ge 46-x

Ali Saramat*, Eric S. Toberer, Andrew F. May, G. Jeffery Snyder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Polycrystalline Ba 8Ga x Ge 46-x exhibits promising thermoelectric performance with the figure of merit ZT close to that of single crystals. Polycrystalline Ba 8Ga x Ge 46-x is promising for applications, but reproducibility and thermal stability of thermoelectric properties need to be demonstrated. Polycrystalline samples of Ba 8+dGa x Ge 46-x -type clathrates (15.0 = x = 16.8 with varied nominal Ga content and d = 0 or 0.2) were prepared by direct reaction of the elements, followed by ball milling and hot pressing. Trace Ge impurity was observed (<1.0 wt.%) depending on the synthesis method. The electrical resistivity was stable in measurements up to 1000 K, regardless of Ge impurity. However, measurements to 1050 K resulted in irreversible increase in carrier concentration while the carrier mobility remained unchanged.

Original languageEnglish (US)
Pages (from-to)1423-1426
Number of pages4
JournalJournal of Electronic Materials
Issue number7
StatePublished - Jul 2009


  • Ba Ga Ge
  • Carrier concentration
  • Clathrate
  • Electrical resistivity
  • Thermoelectricity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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