Abstract
The use of hard-axis magnetoresistance (MR) measurements for characterization of the device-level anisotropy field and thermal stability in CoFeB/MgO/CoFeB magnetic tunnel junctions is proposed and evaluated. We develop functional forms describing the hard-axis MR curves using a Stoner-Wohlfarth particle model, which are then used for fitting to the experimental curves to extract the free layer magnetic anisotropy field. The model accounts for nonidealities observed in the experimental MR curves in the form of asymmetry (with respect to applied fields), and linear drop in resistance at high fields. Micromagnetic simulations are used to identify the cause for these deviations and verify the presented model.
Original language | English (US) |
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Article number | 07C708 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 7 |
DOIs | |
State | Published - Apr 1 2011 |
ASJC Scopus subject areas
- Physics and Astronomy(all)