Thermal stability of amorphous Zn-In-Sn-O films

Diana E. Proffit, Thomas Philippe*, Jonathan Daniel Emery, Qing Ma, Bruce D. Buchholz, Peter W Voorhees, Michael J Bedzyk, R P H Chang, Thomas O Mason

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Isochronal annealing of amorphous Zn and Sn codoped In2O3 (a-ZITO) films was performed at the Synchrotron so that to extract, in situ, important kinetic nucleation and growth parameters from a single constant-rate heating experiment. First, amorphous Zn and Sn codoped In2O3 films were deposited via pulsed laser deposition and subjected to post-deposition annealing treatments to study their stability against crystallization. Crystallization on glass and ĉ-sapphire occurred near the same temperature, however higher codoping levels resulted in increased crystallization temperatures. Post-deposition anneal crystallization temperatures were found to be higher than the substrate temperatures required to grow crystalline films during deposition. Then, a-ZITO films were subjected to a constant temperature ramp during in situ grazing-incidence X-ray diffraction experiments. Crystallization of films on both glass and ĉ-sapphire showed similar gradual crystallization behavior between 300 and 345 °C and strong (111) texturing, which suggests the influence of surface energy minimization during crystallization. The activation energy was found to be 2.87 eV using Johnson-Mehl-Avrami analysis. This work presents the advantages of in situ experiments to study nucleation and growth during crystallization of transparent conducting oxides.

Original languageEnglish (US)
Pages (from-to)167-174
Number of pages8
JournalJournal of Electroceramics
Volume34
Issue number2-3
DOIs
StatePublished - May 13 2015

Keywords

  • Amorphous
  • Crystallization
  • Transparent conducting oxides
  • Zn-In-Sn-O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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