Abstract
Single crystals of GaN were grown on (0001), (011̄2) Al 2O3 and (0001)Si 6H-SiC substrates using an atmospheric pressure metalorganic chemical-vapor-deposition reactor. The relationship has been studied between the thermal stability of the GaN films and the substrate's surface polarity. It appeared that the N-terminated (0001) GaN surface grown on (0001)Si 6H-SiC has the most stable surface, followed by the nonpolar (112̄0) GaN surface grown on (011̄2) Al 2O3, while the Ga-terminated (0001) GaN surface grown on (0001) Al2O3 has the least stable surface. This is explained with the difference in the atomic configuration of each of these surfaces which induces a difference in their thermal decomposition.
Original language | English (US) |
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Pages (from-to) | 236-241 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 1 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- Physics and Astronomy(all)