Thermal stability of GaN thin films grown on (0001) Al2O 3, (011̄2) Al2O3 and (0001)Si 6H-SiC substrates

C. J. Sun*, P. Kung, A. Saxler, H. Ohsato, E. Bigan, Manijeh Razeghi, D. K. Gaskill

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

Single crystals of GaN were grown on (0001), (011̄2) Al 2O3 and (0001)Si 6H-SiC substrates using an atmospheric pressure metalorganic chemical-vapor-deposition reactor. The relationship has been studied between the thermal stability of the GaN films and the substrate's surface polarity. It appeared that the N-terminated (0001) GaN surface grown on (0001)Si 6H-SiC has the most stable surface, followed by the nonpolar (112̄0) GaN surface grown on (011̄2) Al 2O3, while the Ga-terminated (0001) GaN surface grown on (0001) Al2O3 has the least stable surface. This is explained with the difference in the atomic configuration of each of these surfaces which induces a difference in their thermal decomposition.

Original languageEnglish (US)
Pages (from-to)236-241
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number1
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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