The thermally activated magnetization reversal of the ferromagnetic (FM) layer was reported in IrMn/CoFe exchange-coupled bilayers with different thickness of antiferromagnetic material (AFM) layer. The dynamics of domain growth was also investigated to determine the influence of thermal activation. The results showed that, with the decrease in temperature of antiferromagnetic materials, the energy barrier for thermally activated reversal decreased so the changes occurring in the AFM layer became more significant.
|Original language||English (US)|
|Journal||Digests of the Intermag Conference|
|State||Published - Dec 1 2002|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: Apr 28 2002 → May 2 2002
ASJC Scopus subject areas
- Electrical and Electronic Engineering