Thermally activated reversal in exchange- coupled structures

Y. G. Wang, A. K. Petford-Long, H. Laidler, K. O'Grady, M. T. Kief

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently much attention has been paid to the thermally activated reversal of an antiferromagnetic (AFM) layer which can influence the operation of various information storage devices, such as spin-valves and spin-tunnel junctions, although it occurs at a much higher field than that at which the device operates. In this article, we report our results on the thermally activated magnetisation reversal of the ferromagnetic (FM) layer in IrMn/CoFe exchange-coupled bilayers with different thickness of AFM layer, dAFM.

Original languageEnglish (US)
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780373650, 9780780373655
DOIs
StatePublished - 2002
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

Publication series

NameINTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
CountryNetherlands
CityAmsterdam
Period4/28/025/2/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Thermally activated reversal in exchange- coupled structures'. Together they form a unique fingerprint.

Cite this