Abstract
Thin films of the hexagonal phase of Bi 1-x Te 1+x have been grown on CdTe(111) substrates using molecular beam epitaxy (MBE). Analysis of X-ray diffraction patterns (θ-2θ scans and rocking curves) of the films shows that their crystallinity depends upon the compositional deviation from stoichiometric BiTe. Measurements of the temperature-dependent thermoelectric power (TEP) of the films reveals that compositional changes cause the TEP to vary from electron dominant (n-type) to hole dominant (p-type), implying their possible application as a thermoelectric cooler or power generator. Measurements of the temperature-dependent resistivity of the films were conducted, and the analysis shows semimetallic behavior. These results demonstrate that Bi 1-x Te 1+x is an appropriate model system to study the dependencies of thermoelectric and structural properties on binary composition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 177-181 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 545 |
| State | Published - Jan 1 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering