Thermoelectric performance of n -type (PbTe)0.75(PbS) 0.15(PbSe)0.1 composites

Sima Aminorroaya Yamini*, Heng Wang, Dianta Ginting, David R G Mitchell, Shi Xue Dou, G. Jeffrey Snyder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Lead chalcogenides (PbQ, Q = Te, Se, S) have proved to possess high thermoelectric efficiency for both n-type and p-type compounds. Recent success in tuning of electronic band structure, including manipulating the band gap, multiple bands, or introducing resonant states, has led to a significant improvement in the thermoelectric performance of p-type lead chalcogenides compared to the n-type ones. Here, the n-type quaternary composites of (PbTe)0.75(PbS)0.15(PbSe)0.1 are studied to evaluate the effects of nanostructuring on lattice thermal conductivity, carrier mobility, and effective mass variation. The results are compared with the similar ternary systems of (PbTe)1-x(PbSe)x, (PbSe) 1-x(PbS)x, and (PbS)1-x(PbTe)x. The reduction in the lattice thermal conductivity owing to phonon scattering at the defects and interfaces was found to be compensated by reduced carrier mobility. This results in a maximum figure of merit, zT, of ∼1.1 at 800 K similar to the performance of the single phase alloys of PbTe, PbSe, and (PbTe) 1-x(PbSe)x.

Original languageEnglish (US)
Pages (from-to)11476-11483
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number14
DOIs
StatePublished - Jul 23 2014

Keywords

  • composite
  • mobility
  • n -type
  • quaternary Pb chalcogenides
  • thermal conductivity
  • thermoelectric

ASJC Scopus subject areas

  • Materials Science(all)

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