Thermoelectric power of Bi and Bi1-xSbx alloy thin films and superlattices grown by MBE

Sunglae Cho*, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer, Craig A. Hoffman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1-xSbx alloy thin films and superlattices as a function of temperature in the range 20-300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 angstroms and 800 angstroms Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi1-xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1-xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Original languageEnglish (US)
Pages (from-to)67-72
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume478
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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