Thermoelectric power of Bi and Bi1-xSbx alloy thin films and superlattices grown by MBE

Sunglae Cho; Antonio DiVenere; George K. Wong; John B Ketterson; Jerry R. Meyer; Craig A. Hoffman

Thermoelectric power of Bi and Bi_1-xSb_x alloy thin films and superlattices grown by MBE

Sunglae Cho^*, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer, Craig A. Hoffman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi_1-xSb_x alloy thin films and superlattices as a function of temperature in the range 20-300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 angstroms and 800 angstroms Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi_1-xSb_x thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi_1-xSb_x well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Original language	English (US)
Pages (from-to)	67-72
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	478
State	Published - Jan 1 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Mar 31 1997 → Apr 3 1997

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{94833a86009a4d89a061c0f2ab0fa951,

title = "Thermoelectric power of Bi and Bi1-xSbx alloy thin films and superlattices grown by MBE",

abstract = "We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1-xSbx alloy thin films and superlattices as a function of temperature in the range 20-300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 angstroms and 800 angstroms Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi1-xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1-xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.",

author = "Sunglae Cho and Antonio DiVenere and Wong, {George K.} and Ketterson, {John B} and Meyer, {Jerry R.} and Hoffman, {Craig A.}",

year = "1997",

month = jan,

day = "1",

language = "English (US)",

volume = "478",

pages = "67--72",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 31-03-1997 Through 03-04-1997",

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TY - JOUR

T1 - Thermoelectric power of Bi and Bi1-xSbx alloy thin films and superlattices grown by MBE

AU - Cho, Sunglae

AU - DiVenere, Antonio

AU - Wong, George K.

AU - Ketterson, John B

AU - Meyer, Jerry R.

AU - Hoffman, Craig A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1-xSbx alloy thin films and superlattices as a function of temperature in the range 20-300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 angstroms and 800 angstroms Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi1-xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1-xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

AB - We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1-xSbx alloy thin films and superlattices as a function of temperature in the range 20-300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 angstroms and 800 angstroms Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi1-xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1-xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

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M3 - Conference article

AN - SCOPUS:0030716625

SN - 0272-9172

VL - 478

SP - 67

EP - 72

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 31 March 1997 through 3 April 1997

ER -

Thermoelectric power of Bi and Bi_1-xSb_x alloy thin films and superlattices grown by MBE

Abstract

ASJC Scopus subject areas

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