Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

M. A. Brummell*, T. H H Vuong, R. J. Nicholas, J. C. Portal, M. Razeghi, K. Y. Cheng, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga.47In.53As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.

Original languageEnglish (US)
Pages (from-to)377-380
Number of pages4
JournalSolid State Communications
Volume57
Issue number6
DOIs
StatePublished - Feb 1986

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Brummell, M. A., Vuong, T. H. H., Nicholas, R. J., Portal, J. C., Razeghi, M., Cheng, K. Y., & Cho, A. Y. (1986). Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field. Solid State Communications, 57(6), 377-380. https://doi.org/10.1016/0038-1098(86)90473-4