Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

M. A. Brummell; T. H H Vuong; R. J. Nicholas; J. C. Portal; M. Razeghi; K. Y. Cheng; A. Y. Cho

doi:10.1016/0038-1098(86)90473-4

Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

M. A. Brummell^*, T. H H Vuong, R. J. Nicholas, J. C. Portal, M. Razeghi, K. Y. Cheng, A. Y. Cho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga_.47In_.53As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.

Original language	English (US)
Pages (from-to)	377-380
Number of pages	4
Journal	Solid State Communications
Volume	57
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(86)90473-4
State	Published - Feb 1986

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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@article{90d82ba75abc4490a26ef10f9dc50a3b,

title = "Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field",

abstract = "This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga.47In.53As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.",

author = "Brummell, {M. A.} and Vuong, {T. H H} and Nicholas, {R. J.} and Portal, {J. C.} and M. Razeghi and Cheng, {K. Y.} and Cho, {A. Y.}",

year = "1986",

month = feb,

doi = "10.1016/0038-1098(86)90473-4",

language = "English (US)",

volume = "57",

pages = "377--380",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

AU - Brummell, M. A.

AU - Vuong, T. H H

AU - Nicholas, R. J.

AU - Portal, J. C.

AU - Razeghi, M.

AU - Cheng, K. Y.

AU - Cho, A. Y.

PY - 1986/2

Y1 - 1986/2

N2 - This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga.47In.53As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.

AB - This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga.47In.53As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.

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U2 - 10.1016/0038-1098(86)90473-4

DO - 10.1016/0038-1098(86)90473-4

M3 - Article

AN - SCOPUS:0022664170

SN - 0038-1098

VL - 57

SP - 377

EP - 380

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

Abstract

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