Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

S. Cho; A. DiVenere; G. K. Wong; J. B. Ketterson; J. R. Meyer; C. A. Hoffman

doi:10.1016/S0038-1098(97)00063-X

Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

S. Cho^*, A. DiVenere, G. K. Wong, J. B. Ketterson, J. R. Meyer, C. A. Hoffman

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

Original language	English (US)
Pages (from-to)	673-676
Number of pages	4
Journal	Solid State Communications
Volume	102
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1098(97)00063-X
State	Published - Jun 1997

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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@article{225bb12086dc44898fa94bba27bdc370,

title = "Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates",

abstract = "We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 {\AA} Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {\AA} and 800 {\AA} Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.",

author = "S. Cho and A. DiVenere and Wong, {G. K.} and Ketterson, {J. B.} and Meyer, {J. R.} and Hoffman, {C. A.}",

note = "Funding Information: Acknowledgements-The authors would like to acknowledge Yoonseok Lee for his help in TEP measurements.T his work was supported by ARPA under Award No. D437100a nd ONR under Document NOO01496WX20241.U se was made of MRL Central Facilities supportedb y the National Science Foundation, at the Materials Research Center of Northwestern University, under Award No. DMR-9 12052 1.",

year = "1997",

month = jun,

doi = "10.1016/S0038-1098(97)00063-X",

language = "English (US)",

volume = "102",

pages = "673--676",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "9",

}

TY - JOUR

T1 - Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

AU - Cho, S.

AU - DiVenere, A.

AU - Wong, G. K.

AU - Ketterson, J. B.

AU - Meyer, J. R.

AU - Hoffman, C. A.

N1 - Funding Information: Acknowledgements-The authors would like to acknowledge Yoonseok Lee for his help in TEP measurements.T his work was supported by ARPA under Award No. D437100a nd ONR under Document NOO01496WX20241.U se was made of MRL Central Facilities supportedb y the National Science Foundation, at the Materials Research Center of Northwestern University, under Award No. DMR-9 12052 1.

PY - 1997/6

Y1 - 1997/6

N2 - We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

AB - We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

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U2 - 10.1016/S0038-1098(97)00063-X

DO - 10.1016/S0038-1098(97)00063-X

M3 - Article

AN - SCOPUS:0031169066

SN - 0038-1098

VL - 102

SP - 673

EP - 676

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

Abstract

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