Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates

S. Cho*, A. DiVenere, G. K. Wong, J. B. Ketterson, J. R. Meyer, C. A. Hoffman

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

We have measured the thermoelectric power (TEP) of epitaxial Bi thin films and Bi/CdTe superlattices grown on CdTe substrates as a function of temperature in the range 20-300 K. We have observed that the TEP of a 10 000 Å Bi thin film is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. However, p-type doping effects in both thin films and superlattices lead to a positive TEP in samples with thinner quantum wells and a suppression of the magnitude in all cases. This suggests that the TEP may be enhanced further by altering the growth conditions to reduce the excess hole concentration.

Original languageEnglish (US)
Pages (from-to)673-676
Number of pages4
JournalSolid State Communications
Volume102
Issue number9
DOIs
StatePublished - Jun 1997

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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