The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.
|Original language||English (US)|
|Number of pages||8|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials