TY - GEN
T1 - Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys
AU - Gerovac, N.
AU - Snyder, G. J.
AU - Caillat, T.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - (BixSb1-x)2Te3 (.5 < x < .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated from these properties. The best ZT was ~.5, given by annealed (Bi.7Sb.3)2Te3. Selected samples were also annealed at various temperatures in an attempt to optimize ZT. The annealing substantially impacted the thermoelectric properties due to a combination of improved crystallinity and changes in defect concentration. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.
AB - (BixSb1-x)2Te3 (.5 < x < .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated from these properties. The best ZT was ~.5, given by annealed (Bi.7Sb.3)2Te3. Selected samples were also annealed at various temperatures in an attempt to optimize ZT. The annealing substantially impacted the thermoelectric properties due to a combination of improved crystallinity and changes in defect concentration. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.
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U2 - 10.1109/ICT.2002.1190259
DO - 10.1109/ICT.2002.1190259
M3 - Conference contribution
AN - SCOPUS:46149092933
T3 - International Conference on Thermoelectrics, ICT, Proceedings
SP - 31
EP - 34
BT - Proceedings ICT 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Thermoelectrics, ICT 2002
Y2 - 25 August 2002 through 29 August 2002
ER -