Thermoelectric properties of Nb3SbxTe7-xcompounds

Sidney Wang; G. Jeff Snyder; Thierry Caillat

doi:10.1109/ICT.2002.1190292

Thermoelectric properties of Nb₃Sb_xTe_7-xcompounds

Sidney Wang, G. Jeff Snyder, Thierry Caillat

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Niobium antimony telluride, Nb₃Sb_xTe_7-x was synthesized and tested for thermoelectric properties in the Thermo electrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb₃Sb₂Te₅ and its varied mixture of atoms yield a complicated structure, suggesting that Nb₃Sb₂Te₅ and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb₃Sb_xTe_7-x compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb₃Sb₂Te_x is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n- Type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondaiy metallic phases that dominated the transport properties of the resulting compounds.

Original language	English (US)
Title of host publication	Proceedings ICT 2002
Subtitle of host publication	21st International Conference on Thermoelectrics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	170-172
Number of pages	3
ISBN (Electronic)	0780376838
DOIs	https://doi.org/10.1109/ICT.2002.1190292
State	Published - 2002
Event	21st International Conference on Thermoelectrics, ICT 2002 - Long Beach, United States Duration: Aug 25 2002 → Aug 29 2002

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings
Volume	2002-January

Other

Other	21st International Conference on Thermoelectrics, ICT 2002
Country/Territory	United States
City	Long Beach
Period	8/25/02 → 8/29/02

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/ICT.2002.1190292

Cite this

Wang, S., Jeff Snyder, G., & Caillat, T. (2002). Thermoelectric properties of Nb₃Sb_xTe_7-xcompounds. In Proceedings ICT 2002: 21st International Conference on Thermoelectrics (pp. 170-172). [1190292] (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICT.2002.1190292

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title = "Thermoelectric properties of Nb3SbxTe7-xcompounds",

abstract = "Niobium antimony telluride, Nb3SbxTe7-x was synthesized and tested for thermoelectric properties in the Thermo electrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield a complicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Tex is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n- Type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondaiy metallic phases that dominated the transport properties of the resulting compounds.",

author = "Sidney Wang and {Jeff Snyder}, G. and Thierry Caillat",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 21st International Conference on Thermoelectrics, ICT 2002 ; Conference date: 25-08-2002 Through 29-08-2002",

year = "2002",

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Wang, S, Jeff Snyder, G & Caillat, T 2002, Thermoelectric properties of Nb₃Sb_xTe_7-xcompounds. in Proceedings ICT 2002: 21st International Conference on Thermoelectrics., 1190292, International Conference on Thermoelectrics, ICT, Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 170-172, 21st International Conference on Thermoelectrics, ICT 2002, Long Beach, United States, 8/25/02. https://doi.org/10.1109/ICT.2002.1190292

Thermoelectric properties of Nb₃Sb_xTe_7-xcompounds. / Wang, Sidney; Jeff Snyder, G.; Caillat, Thierry.

Proceedings ICT 2002: 21st International Conference on Thermoelectrics. Institute of Electrical and Electronics Engineers Inc., 2002. p. 170-172 1190292 (International Conference on Thermoelectrics, ICT, Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Niobium antimony telluride, Nb3SbxTe7-x was synthesized and tested for thermoelectric properties in the Thermo electrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield a complicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Tex is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n- Type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondaiy metallic phases that dominated the transport properties of the resulting compounds.

AB - Niobium antimony telluride, Nb3SbxTe7-x was synthesized and tested for thermoelectric properties in the Thermo electrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield a complicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Tex is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n- Type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondaiy metallic phases that dominated the transport properties of the resulting compounds.

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