Thermoelectric properties of new Zintl phases: Ba4In8Sb16 and Ba6Ge25-x

Sung Jin Kim*, Wei Chen, Ctirad Uher, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A new compound Ba4In8Sb16 is being explored for thermoelectric potential. It crystallizes in the orthorhombic space group Pnma with a = 10.166(3) angstroms, b = 4.5239(14) angstroms, c = 19.495(6) angstroms and Z = 1. Ba4In8Sb16 has a 2-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba ions. The compound is a narrow band-gap (approximately 0.10 eV) semiconductor. Polycrystalline ingots of Ba4In8Sb16 show room temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range of 150-300 K. The new compound Ba6Ge25-x was also examined. Ba6Ge25-x adopts chiral clathrate structure with cubic space group P4132 and dimension of a = 14.5483(2) angstroms. Ba6Ge25-x shows room temperature electrical conductivity of 2000 S/cm and a Seebeck coefficient of -18 μV/K. The thermal conductivity was about 2.5 W/m·K at room temperature. Both of the compounds reporting here are air and moisture stable.

Original languageEnglish (US)
Pages (from-to)165-168
Number of pages4
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
StatePublished - 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

ASJC Scopus subject areas

  • Engineering(all)


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