Thermoelectric properties of p-type polycrystalline SnSe doped with Ag

Cheng Lung Chen, Heng Wang, Yang Yuan Chen, Tristan Day, G. Jeffrey Snyder*

*Corresponding author for this work

Research output: Contribution to journalArticle

341 Scopus citations

Abstract

Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.

Original languageEnglish (US)
Pages (from-to)11171-11176
Number of pages6
JournalJournal of Materials Chemistry A
Volume2
Issue number29
DOIs
StatePublished - Aug 7 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

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