Abstract
AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.
Original language | English (US) |
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Pages (from-to) | 155-160 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 793 |
DOIs | |
State | Published - 2003 |
Event | Thermoelectric Materials 2003 - Research and Applications - Boston, MA., United States Duration: Dec 1 2003 → Dec 3 2003 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering