Thermoelectric properties of the cubic AgPb10SbTe12

Kuei Fang Hsu*, Sim Loo, Wet Chen, Ctirad Uher, Tim Hogan, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

Original languageEnglish (US)
Pages (from-to)155-160
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume793
DOIs
StatePublished - 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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