Thermoelectric properties of the incommensurate layered semiconductor GexNbTe2

G. Jeffrey Snyder*, T. Caillat, J. P. Fleurial

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The compounds GexNbTe2 (0.39≤x≤0.53) have been studied for their thermoelectric properties. By changing x, the carrier concentration can be adjusted so that the material changes from a p-type metal to a p-type semiconductor. The maximum germanium concentration at about Ge0.5NbTe2, is also the most semiconducting composition. High and low temperature electrical resistivity, Hall effect, Seebeck coefficient, and thermal conductivity were measured. The thermal conductivity is reasonably low and glass-like with room temperature values around 20-25 mW/cm K. However, the power factor is too low to compete with state of the art materials. The maximum ZT found in these compounds is about 0.12. The low ZT can be traced to the low carrier mobility of about 10 cm2/Vs. The related compounds Si0.5NbTe2 and Ge0.5TaTe2 were also studied.

Original languageEnglish (US)
Pages (from-to)541-545
Number of pages5
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Engineering(all)


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