TY - JOUR
T1 - Thermoelectric properties of the incommensurate layered semiconductor GexNbTe2
AU - Snyder, G. Jeffrey
AU - Caillat, T.
AU - Fleurial, J. P.
N1 - Funding Information:
We would like to thank A. Borshchevsky, A. Zoltan, L.D. Zoltan, and S. Chung for their help on this project. This work was carried out at the Jet Propulsion Laboratory—California Institute of Technology, under contract with the National Aeronautics and Space Administration and supported by the U.S. Defense Advanced Research Projects Agency, Grant No. E407.
PY - 2000/12
Y1 - 2000/12
N2 - The compounds GexNbTe2 (0.39 ≤ x ≤ 0.53) have been studied for their thermoelectric properties. By changing x, the carrier concentration can be adjusted so that the material changes from a p-type metal to a p-type semiconductor. The maximum germanium concentration at about Ge0.5NbTe2 is also the most semiconducting composition. High- and low-temperature electrical resistivity, Hall effect, Seebeck coefficient, and thermal conductivity were measured. Evidence of electronic ordering was found in some samples. The thermal conductivity is reasonably low and glasslike with room temperature values around 20-25 mW/cm K. However, the power factor is too low to compete with state-of-the-art materials. The maximum thermoelectric figure of merit, ZT found in these compounds is about 0.12. The low ZT can be traced to the low carder mobility of about 10 cm2/Vs. The related compounds Si0.5NbTe2 and Ge0.5TaTe2 were also studied.
AB - The compounds GexNbTe2 (0.39 ≤ x ≤ 0.53) have been studied for their thermoelectric properties. By changing x, the carrier concentration can be adjusted so that the material changes from a p-type metal to a p-type semiconductor. The maximum germanium concentration at about Ge0.5NbTe2 is also the most semiconducting composition. High- and low-temperature electrical resistivity, Hall effect, Seebeck coefficient, and thermal conductivity were measured. Evidence of electronic ordering was found in some samples. The thermal conductivity is reasonably low and glasslike with room temperature values around 20-25 mW/cm K. However, the power factor is too low to compete with state-of-the-art materials. The maximum thermoelectric figure of merit, ZT found in these compounds is about 0.12. The low ZT can be traced to the low carder mobility of about 10 cm2/Vs. The related compounds Si0.5NbTe2 and Ge0.5TaTe2 were also studied.
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U2 - 10.1557/JMR.2000.0398
DO - 10.1557/JMR.2000.0398
M3 - Article
AN - SCOPUS:0034582730
SN - 0884-2914
VL - 15
SP - 2789
EP - 2793
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 12
ER -